E effects imply that comparable mechanisms operate for lattice disordering and electronic sputtering. It really is of curiosity to evaluate the Se dependence of lattice disordering with that of electronic sputtering for components aside from people pointed out over. Within this paper, we have measured the lattice disordering of SiO2 , ZnO, Fe2 O3 and TiN movies, and the sputtering of TiN. The XRD results are in contrast with the sputtering. The exciton model is examined and scaling parameters are explored for representing electronic excitation results. 2. Components and Solutions XRD continues to be measured employing Cu-k radiation. Accuracy in the XRD intensity is estimated to get about 10 , primarily based on the variation of repeated measurements. Rutherford backscattering (RBS) has become carried out with MeV He ions for evaluation of film thickness and composition. Similarly, accuracy in the RBS is estimated thinking of the variation of the repeated measurements. High-energy ion irradiation has become performed at space temperature and typical incidence. Irradiation of high-energy ion with decrease incident charge compared to the FM4-64 Chemical equilibrium charge with no carbon foil is often employed for the samples of XRD measurement; nevertheless, the effect of non-equilibrium charge incidence isn’t going to come into perform for the reason that the length for attaining the equilibrium charge is substantially smaller sized than the movie thickness, as described for every material in Segment 3. SiO2 movies are actually grown by thermal oxidation of Si(001) at 1300 C for five hr. In accordance to XRD, the films are polycrystalline with diffraction peaks at 21 , 22 , 31 , 33 , 36 and 69 , with quite weak peak at 44 and 47 . The peaks at 21 , 22 , 44 and 47 have already been assigned to (100), (002), (004) and (202) diffraction of hexagonal-tridymite framework [70]. The sturdy peak at 69 is Si(004) and peak at 33 is possibly Si(002). Movie thickness is one.5 as well as composition is stoichiometric (O/Si = two.0 five ) by RBS of 1.8 MeV He. Movie density is taken to be exactly the same as that of amorphous-SiO2 (a-SiO2), considering the fact that it has been derived to get 2.26 gcm-3 from XRD benefits, which is near to that of a-SiO2 (two.two gcm-3) Pure ZnO films are prepared on MgO (001) substrate through the use of a radio frequency magnetron sputtering (RFMS) deposition method with ZnO target, and it has been reported that the dominant growth orientation is (001) and (a hundred) of hexagonal-wurtzite structureQuantum Beam Sci. 2021, 5,4 ofdepending around the substrate temperature of 350 C and 500 C throughout the movie development, respectively [71,77,78]. The composition is stoichiometric, i.e., O/Zn = 1.0 0.05, and film thickness is a hundred nm by He RBS. Here, the density is taken to become four.2 1022 Zn cm-3 (five.67 gcm-3 ). Planning and characterization solutions of Fe2 O3 movies are described in [60]. Briefly, Fe2 O3 movies are ready by deposition of Fe Compound 48/80 In Vitro layers on SiO2 -glass and C-plane minimize Al2 O3 (C-Al2 O3 ) substrates utilizing a RFMS deposition system with Fe target (99.99 ) and Ar fuel, followed by oxidation at 500 C for 2 hr in air. In accordance to RBS of one.four.8 MeV He ions, the composition is stoichiometric (O/Fe = one.5 0.1) and film thickness utilized in this study is 100 nm. Right here, the density of 3.96 1022 Fe cm-3 (5.25 gcm-3 ) is employed. Diffraction peaks are actually observed at 33 and 36 , and crystalline framework is recognized as hexagonal Fe2 O3 (hematite or -Fe2 O3 ). These correspond to (104) and (110) diffraction planes. TiN films have already been ready on SiO2 -glass, C-plane cut Al2 O3 (C-Al2 O3 ) and R-plane c.
